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Simultaneous Large-scale Reliability Analysis of Ultra-thin Mos Gate Dielectrics Using an Automated Test System : Volume 6, Issue 8 (26/05/2008)

By Domdey, A.

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Book Id: WPLBN0003981853
Format Type: PDF Article :
File Size: Pages 3
Reproduction Date: 2015

Title: Simultaneous Large-scale Reliability Analysis of Ultra-thin Mos Gate Dielectrics Using an Automated Test System : Volume 6, Issue 8 (26/05/2008)  
Author: Domdey, A.
Volume: Vol. 6, Issue 8
Language: English
Subject: Science, Advances, Radio
Collections: Periodicals: Journal and Magazine Collection, Copernicus GmbH
Historic
Publication Date:
2008
Publisher: Copernicus Gmbh, Göttingen, Germany
Member Page: Copernicus Publications

Citation

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Krautschneider, W. H., Schroeder, D., Hafkemeyer, K. M., & Domdey, A. (2008). Simultaneous Large-scale Reliability Analysis of Ultra-thin Mos Gate Dielectrics Using an Automated Test System : Volume 6, Issue 8 (26/05/2008). Retrieved from http://www.ebooklibrary.org/


Description
Description: Hamburg University of Technology, Institute of Nanoelectronics, Hamburg, Germany. This article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-up large and hence significant statistics about the degradation process as a function of time.

Summary
Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system

Excerpt
Lombardo, S., Stathis, J. H., Lindner, B. P., et al.: Dielectric Breakdown Mechanisms in Gate Oxides, J. Appl. Phys., 98, 121301, 1–36, 2005.; Depas M., Verneire, B., Mertens, P. W., et al.: Determination of Tunnelling Parameters in Ultra-Thin Oxide Layer Poly-Si/SiO2/Si Structures, Solid-State Electronics, 38, 8, 1465–1471, 1995.; Avellan Hampe, A.: Charakterisierung von MOS-Transistoren vor und nach dem Gateoxiddurchbruch, ISBN 3-18-337109-X, VDI Verlag, 29 pp. , 2004.

 

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